LIQUID-PHASE EPITAXIAL-GROWTH OF ZNSNP2 ON GAAS

被引:15
作者
DAVIS, GA
WOLFE, CM
机构
关键词
D O I
10.1149/1.2119963
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1408 / 1412
页数:5
相关论文
共 7 条
[1]   VAPOR-PHASE EPITAXIAL-GROWTH OF ZNSIAS2 ON GE AND GAAS SUBSTRATES [J].
ANDREWS, JE ;
STADELMAIER, HH ;
LITTLEJOHN, MA ;
COMAS, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1563-1568
[2]  
DAVIS GA, 1981, THESIS WASHINGTON U
[3]   SURFACE RECONSTRUCTION ON SEMICONDUCTORS [J].
HARRISON, WA .
SURFACE SCIENCE, 1976, 55 (01) :1-19
[4]   ON THE (110) ORIENTATION AS THE PREFERRED ORIENTATION FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON GE, GAP ON SI, AND SIMILAR ZINCBLENDE-ON-DIAMOND SYSTEMS [J].
KROEMER, H ;
POLASKO, KJ ;
WRIGHT, SC .
APPLIED PHYSICS LETTERS, 1980, 36 (09) :763-765
[5]   COEFFICIENT OF EXPANSION OF GALLIUM ARSENIDE FROM -62 TO 200 DEGREES C [J].
PIERRON, ED ;
PARKER, DL ;
MCNEELY, JB .
ACTA CRYSTALLOGRAPHICA, 1966, 21 :290-&
[6]  
Shay J. L., 1975, TERNARY CHALCOPYRITE
[7]   STRUCTURE AND PROPERTIES OF SEMICONDUCTING COMPOUND ZNSNP2 [J].
VAIPOLIN, AA ;
GORYUNOVA, NA ;
KLESHCHINSKII, LI ;
LOSHAKOVA, GV ;
OSMANOV, EO .
PHYSICA STATUS SOLIDI, 1968, 29 (01) :435-+