DEFECT-INITIATED ATOMIC EMISSIONS FROM SEMICONDUCTOR SURFACES INDUCED BY LASER IRRADIATION - ELECTRONIC CLEANING OF DEFECTS ON SURFACES

被引：8

作者：

KANASAKI, J

OKANO, A

NAKAI, Y

ITOH, N

机构：

[1] Department of Physics, Nagoya University, Nagoya, 464-01, Furo-cho, Chikusa

来源：

APPLIED SURFACE SCIENCE | 1994年 / 79-80卷

关键词：

D O I：

10.1016/0169-4332(94)90395-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We compare the emission of Si atoms from Si (100) surfaces and of Ga atoms from GaAs (110) and GaP (110) surfaces induced by irradiation with low-fluence laser pulses, each of which emits atoms of about 10(-6) monolayers, and found a strong correlation between the laser fluence that can cause emission and the strength of the bond by which the emitted atoms are bound.

引用

页码：100 / 103

页数：4

共 9 条

[1]

Harrison WA., 1989, ELECT STRUCTURE PROP, P176

[2] CHARACTERIZATION OF SURFACE-DEFECTS BY MEANS OF LASER-INDUCED GA0 EMISSION FROM GAP SURFACES [J].