RAPID DIRECT WRITING OF HIGH-ASPECT RATIO TRENCHES IN SILICON - PROCESS PHYSICS

被引：18

作者：

TREYZ, GV

BEACH, R

OSGOOD, RM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 01期

关键词：

D O I：

10.1116/1.583958

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：37 / 44

页数：8

共 17 条

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