PERSISTENT ELECTRON REDISTRIBUTION AMONG DEEP LEVELS IN CDTE

被引：10

作者：

JANTSCH, W

BRUNTHALER, G

机构：

来源：

关键词：

D O I：

10.1063/1.95522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：666 / 668

页数：3

共 6 条

[1] ELECTRON-PARAMAGNETIC RESONANCE INVESTIGATION OF PB-DOPED AND GE-DOPED CDTE
BILBE, RM
NICHOLLS, JE
DAVIES, JJ
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1984, 121 (01): : 339 - 344
[2] ELECTRON-SPIN-RESONANCE ANALYSIS OF THE DEEP DONORS LEAD, TIN, AND GERMANIUM IN CDTE
BRUNTHALER, G
JANTSCH, W
KAUFMANN, U
SCHNEIDER, J
[J]. PHYSICAL REVIEW B, 1985, 31 (03): : 1239 - 1243
[3] BRUNTHALER G, 1984, J ELECTRON MATER
[4] DEEP LEVELS IN SEMICONDUCTORS - INFLUENCE OF HYDROSTATIC-PRESSURE
JANTSCH, W
WUNSTEL, K
KUMAGAI, O
VOGL, P
[J]. PHYSICA B & C, 1983, 117 (MAR): : 188 - 190
[5] IDENTIFICATION OF THE ISOLATED DEEP NI ACCEPTOR IN CDTE AND ZNTE - COMPARISON WITH ISOMORPHOUS SYSTEMS
KAUFMANN, U
WINDSCHEIF, J
BRUNTHALER, G
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (34): : 6169 - 6176
[6] KAUFMANN U, UNPUB