EVOLUTION OF THE ELECTRONIC STATES OF COUPLED (IN,GA)AS-GAAS QUANTUM-WELLS INTO SUPERLATTICE MINIBANDS

被引：15

作者：

MOORE, KJ ^{[1
]}

DUGGAN, G ^{[1
]}

WOODBRIDGE, K ^{[1
]}

ROBERTS, C ^{[1
]}

PULSFORD, NJ ^{[1
]}

NICHOLAS, RJ ^{[1
]}

机构：

[1] UNIV OXFORD,CLARENDON LAB,OXFORD OX1 3PU,ENGLAND

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.42.3024

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have used photoluminescence excitation (PLE) spectroscopy to study the evolution of the electronic states, and associated optical transitions, as the number of wells is increased from 2 to 5 to 20 in the strained (In,Ga)As-GaAs quantum-well system. The indium fraction in the wells was nominally 0.12. The PLE spectra of the two-well and ive-well samples show strong n=0 exciton transitions and further features associated with transitions from confined states to continuum states. When a superlattice (SL) is formed, in the 20-well sample, we see momentum-conserving optical transitions at the mini-Brillouin-zone center and edge. We have also identified transitions associated with M1 critical points in the SL band structure. One of these is a n=0 exciton resonance below the saddle point while the other is a n 0 exciton which has become allowed due to momentum mixing of the light- and heavy-hole bands in the plane perpendicular to the growth direction. © 1990 The American Physical Society.

引用

页码：3024 / 3029

页数：6

共 25 条

[1] BOUND AND VIRTUAL BOUND-STATES IN SEMICONDUCTOR QUANTUM WELLS [J].