DIRECT PROBING OF TYPE-II BAND CONFIGURATIONS IN SEMICONDUCTOR SUPERLATTICES

被引：18

作者：

GERARD, JM

MARZIN, JY

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.40.6450

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6450 / 6453

页数：4

共 17 条

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[6] OPTICAL INVESTIGATION OF HIGHLY STRAINED INGAAS-GAAS MULTIPLE QUANTUM-WELLS
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[7] CONCENTRATION-DEPENDENT BAND OFFSET IN INXGA1-XAS/GAAS STRAINED QUANTUM WELLS
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[8] OPTICAL INVESTIGATION OF A NEW TYPE OF VALENCE-BAND CONFIGURATION IN INXGA1-XAS-GAAS STRAINED SUPERLATTICES
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[10] LARGE VALENCE-BAND OFFSET IN STRAINED-LAYER INXGA1-XAS-GAAS QUANTUM-WELLS
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