DIRECT PROBING OF TYPE-II BAND CONFIGURATIONS IN SEMICONDUCTOR SUPERLATTICES

被引：18

作者：

GERARD, JM

MARZIN, JY

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.40.6450

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：6450 / 6453

页数：4

相关论文

共 17 条

[11] EFFECTS OF ELECTRONIC COUPLING ON THE BAND ALIGNMENT OF THIN GAAS/ALAS QUANTUM-WELL STRUCTURES
MOORE, KJ
DAWSON, P
FOXON, CT
[J]. PHYSICAL REVIEW B, 1988, 38 (05): : 3368 - 3374
[12] POSITION AND CHARACTER (GAMMA OR X) OF ENERGY-STATES IN SHORT-PERIOD (GAAS)M(ALAS)N SUPERLATTICES
NAGLE, J
GARRIGA, M
STOLZ, W
ISU, T
PLOOG, K
[J]. JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 495 - 498
[13] A GAASXP1-X-GAP STRAINED-LAYER SUPER-LATTICE
OSBOURN, GC
BIEFELD, RM
GOURLEY, PL
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 172 - 174
[14] PHOTOREFLECTANCE STUDY OF NARROW-WELL STRAINED-LAYER INXGA1-XAS/GAAS COUPLED MULTIPLE-QUANTUM-WELL STRUCTURES
PAN, SH
SHEN, H
HANG, Z
POLLAK, FH
ZHUANG, WH
XU, Q
ROTH, AP
MASUT, RA
LACELLE, C
MORRIS, D
[J]. PHYSICAL REVIEW B, 1988, 38 (05): : 3375 - 3382
[15] GROWTH-CONDITIONS AND CHARACTERIZATION OF INGAAS GAAS STRAINED LAYERS SUPERLATTICES
QUILLEC, M
GOLDSTEIN, L
LEROUX, G
BURGEAT, J
PRIMOT, J
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 2904 - 2909
[16] LATTICE-STRAINED HETEROJUNCTION INGAAS/GAAS BIPOLAR STRUCTURES - RECOMBINATION PROPERTIES AND DEVICE PERFORMANCE
RAMBERG, LP
ENQUIST, PM
CHEN, YK
NAJJAR, FE
EASTMAN, LF
FITZGERALD, EA
KAVANAGH, KL
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 1234 - 1236
[17] INAS-GASB SUPER-LATTICE ENERGY STRUCTURE AND ITS SEMICONDUCTOR-SEMI-METAL TRANSITION
SAIHALASZ, GA
ESAKI, L
HARRISON, WA
[J]. PHYSICAL REVIEW B, 1978, 18 (06): : 2812 - 2818