TELLURIUM-RELATED TRAP LEVELS IN SILICON

被引：4

作者：

HOFMANN, K

SCHULZ, M

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1984年 / 33卷 / 01期

关键词：

D O I：

10.1007/BF01197080

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：19 / 24

页数：6

共 16 条

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[9] DEEP LEVEL TRANSIENT SPECTROSCOPY STUDIES OF TRAPPING PARAMETERS FOR CENTERS IN INDIUM-DOPED SILICON [J].

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