OPTIMIZED HEMT STRUCTURE WITH AN AL0.45GA0.55AS SPACER AND AN AL0.20GA0.80AS DOPED REGION

被引：3

作者：

HUANG, JC ^{[1
]}

WICKS, GW ^{[1
]}

CALAWA, AR ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 20期

关键词：

D O I：

10.1049/el:19850654

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have obtained an optimised HEMT structure with a high 2DEG sheet concentration of 1 multiplied by 10**1**2 cm** minus **2 while maintaining a high 77 K electron Hall mobility of 120 000 cm**2 Vs. The structure utilises a 45% Al mole fraction. AlGaAs barrier and a 20% Al mole fraction doped region. It has little or no light sensitivity at 77 K.

引用

页码：925 / 926

页数：2

共 14 条

[1] ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE
BABA, T
MIZUTANI, T
OGAWA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L627 - L629
[2] NEW HIGH-SPEED III-V DEVICES FOR INTEGRATED-CIRCUITS
DINGLE, R
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (11) : 1662 - 1667
[3] DINGLE R, 1977, I PHYS C SER A, V33, pCH4
[4] EASTMAN LF, 1985, OCT COLD EL C
[5] HICKMOTT TW, 1985, J APPL PHYS, V57
[6] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
HIYAMIZU, S
SAITO, J
NANBU, K
ISHIKAWA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611
[7] HIYAMIZU S, 1985, ELECTRONICS MATERIAL
[8] GROWTH OF HIGH-PURITY GAAS-LAYERS BY MOLECULAR-BEAM EPITAXY
HWANG, JCM
TEMKIN, H
BRENNAN, TM
FRAHM, RE
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 66 - 68
[9] MBE GROWTH AND PROPERTIES OF ALGAAS GAAS ALGAAS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION STRUCTURES WITH VERY HIGH CONDUCTIVITY
INOUE, K
SAKAKI, H
YOSHINO, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (10): : L767 - L769
[10] LEE H, 1984, 11TH P INT S GAAS RE

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