共 21 条
- [1] Bragg W.L., 1934, PROC MATH PHYS ENG S, V145, P699, DOI DOI 10.1098/RSPA.1934.0132
- [2] A REVIEW OF RECENT ADVANCES IN SEMICONDUCTOR SUPER-LATTICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 120 - 125
- [4] ATOMIC-STRUCTURE MODEL FOR GA1-XINXAS SOLID-SOLUTION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5188 - 5191
- [5] CALCULATION OF BOND LENGTH IN GA1-XINXAS TERNARY SEMICONDUCTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (04): : L208 - L210
- [6] (INAS)1(GAAS)1 LAYERED CRYSTAL GROWN BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L521 - L523
- [8] THEORY OF TERNARY-III-V SEMICONDUCTOR PHASE-DIAGRAMS [J]. PHYSICA B & C, 1981, 103 (01): : 41 - 56
- [9] ELEASTIC PROPERTIES OF ZNS STRUCTURE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10): : 4005 - +
- [10] EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF GA1-XINXAS RANDOM SOLID-SOLUTIONS [J]. PHYSICAL REVIEW B, 1983, 28 (12): : 7130 - 7140