OPTICAL AND STRUCTURAL INVESTIGATION OF SIGE/SI QUANTUM-WELLS

被引：71

作者：

VESCAN, L ^{[1
]}

HARTMANN, A ^{[1
]}

SCHMIDT, K ^{[1
]}

DIEKER, C ^{[1
]}

LUTH, H ^{[1
]}

JAGER, W ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, RES CTR, INST SOLID STATE PHYS, W-5170 JULICH 1, GERMANY

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 18期

关键词：

D O I：

10.1063/1.107073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we report photoluminescence and structural results obtained on asymmetrically strained Si0.7Ge0.3/Si single and multiple quantum wells epitaxially grown by low pressure chemical vapor deposition. Well-resolved peaks were obtained which can be attributed to quantum well excitons and their transversal optical phonon replica. A good correlation between peak properties and structure results was found. From the photoluminescence peak energies a valence band offset of 0.27 eV and an effective hole mass of 0.25 were estimated.

引用

页码：2183 / 2185

页数：3

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