EFFECT OF HIGH DOPING ON THE PHOTO-LUMINESCENCE EDGE OF GAAS AND INP

被引：20

作者：

BENDAPUDI, S

BOSE, DN

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 03期

关键词：

D O I：

10.1063/1.93882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：287 / 289

页数：3

共 18 条

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