BAND-GAP NARROWING IN SEMI-INSULATING GAAS

被引：6

作者：

HRIVNAK, L

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1985年 / 127卷 / 02期

关键词：

D O I：

10.1002/pssb.2221270252

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：K165 / K170

页数：6

共 23 条

[1] GEOMETRICAL MAGNETORESISTANCE EFFECT IN SEMICONDUCTORS WITH MIXED CONDUCTIVITY - DETERMINATION OF THE ELECTRON HALL-MOBILITY IN SEMI-INSULATING GAAS [J].

BETKO, J ;

MERINSKY, K .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1983, 77 (01) :331-337

[2] DETERMINATION OF THE ELECTRICAL-PROPERTIES OF SEMI-INSULATING GAAS - ROLE OF THE MAGNETIC-FIELD DEPENDENCES OF SINGLE-CARRIER PARAMETERS [J].

BETKO, J ;

MERINSKY, K .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4212-4216

[3]

BETKO J, COMMUNICATION

[4] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[5] INTRINSIC DENSITY NI(T) IN GAAS - DEDUCED FROM BAND-GAP AND EFFECTIVE MASS PARAMETERS AND DERIVED INDEPENDENTLY FROM CR ACCEPTOR CAPTURE AND EMISSION COEFFICIENTS [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :520-531

[6] ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL GAAS AT HIGH-TEMPERATURES [J].

BLOOD, P .

PHYSICAL REVIEW B, 1972, 6 (06) :2257-&

[7]

BUBE RH, 1974, ELECTRONIC PROPERTIE, P452

[8] PROPERTIES OF SEMI-INSULATING GAAS [J].

GOOCH, CH ;

HOLEMAN, BR ;

HILSUM, C .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2069-&

[9] THE INFLUENCE OF DISLOCATION DENSITY ON THE UNIFORMITY OF ELECTRICAL-PROPERTIES OF SI IMPLANTED, SEMI-INSULATING LEC-GAAS [J].

HONDA, T ;

ISHII, Y ;

MIYAZAWA, S ;

YAMAZAKI, H ;

NANISHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (05) :L270-L272

[10] ON THE RELATION BETWEEN ELECTRON AND HOLE MOBILITIES IN SEMI-INSULATING GAAS [J].

HRIVNAK, L ;

BETKO, J .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1982, 112 (02) :K143-K147

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