THE SPECIFIC CONTACT RESISTANCE OF OHMIC CONTACTS TO HGTE/HG1-XCDXTE HETEROSTRUCTURES

被引：6

作者：

LEECH, PW

机构：

[1] Telecom Australia Research Laboratories, Clayton

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 02期

关键词：

D O I：

10.1063/1.346733

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The specific contact resistance (ρc) of Ohmic contacts to HgTe/Hg0.4Cd0.6Te heterostructures has been measured using a transmission line model. The lowest measured values of ρc (1.7×10-3 Ω cm2) corresponded to the In/HgTe/Hg 0.4Cd0.6Te and Sn/HgTe/Hg0.4Cd 0.6Te systems; while within the range of the other metal contacts examined (Ag, Al, Au, Cr, Cu, Ni, Pt, and Ti), ρc was independent of HgTe/Hg0.4Cd0.6Te interface reactivity. Comparative measurements have also been made with metal junctions formed to Hg 0.4Cd0.6Te and HgTe.

引用

页码：907 / 909

页数：3