VERY LOW THRESHOLD OPERATION OF 1.52-MU-M GALNASP/INP DFB BURIED RIDGE STRUCTURE LASER-DIODES ENTIRELY GROWN BY MOCVD

被引：10

作者：

TALNEAU, A

RONDI, D

KRAKOWSKI, M

BLONDEAU, R

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 10期

关键词：

D O I：

10.1049/el:19880413

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：609 / 611

页数：3

共 6 条

[1] CW OPERATION OF GAINASP BURIED RIDGE STRUCTURE LASER AT 1.5-MU-M GROWN BY LP-MOCVD [J].

BLONDEAU, R ;

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DUCHEMIN, JP .

ELECTRONICS LETTERS, 1984, 20 (21) :850-851

[2] YIELD ANALYSIS OF 2ND-ORDER DSM DFB LASERS AND IMPLICATIONS FOR DESIGN [J].

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MAKINO, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :849-859

[3] ON THE USE OF EFFECTIVE REFRACTIVE-INDEX IN DFB LASER MODE SEPARATION [J].

IGA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10) :1630-1630

[4] HIGH-YIELD MANUFACTURE OF VERY LOW THRESHOLD, HIGH-RELIABILITY, 1.30-MU-M BURIED HETEROSTRUCTURE LASER-DIODES GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

KRAKOWSKI, M ;

BLONDEAU, R ;

KAZMIERSKI, K ;

RAZEGHI, M ;

RICCIARDI, J ;

HIRTZ, P ;

DECREMOUX, B .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1986, 4 (10) :1470-1474

[5] VERY LOW THRESHOLD BURIED RIDGE STRUCTURE LASERS EMITTING AT 1.3 MU-M GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

BLONDEAU, R ;

KAZMIERSKI, K ;

KRAKOWSKI, M ;

DUCHEMIN, JP .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :131-133

[6] CW OPERATION OF 1.57-MU-M GAXIN1-XASYP1-YINP DISTRIBUTED FEEDBACK LASERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

BLONDEAU, R ;

KAZMIERSKI, K ;

KRAKOWSKI, M ;

DECREMOUX, B ;

DUCHEMIN, JP ;

BOULEY, JC .

APPLIED PHYSICS LETTERS, 1984, 45 (07) :784-788

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