HIGH-YIELD MANUFACTURE OF VERY LOW THRESHOLD, HIGH-RELIABILITY, 1.30-MU-M BURIED HETEROSTRUCTURE LASER-DIODES GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

被引：19

作者：

KRAKOWSKI, M

BLONDEAU, R

KAZMIERSKI, K

RAZEGHI, M

RICCIARDI, J

HIRTZ, P

DECREMOUX, B

机构：

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1986年 / 4卷 / 10期

关键词：

D O I：

10.1109/JLT.1986.1074644

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1470 / 1474

页数：5

共 6 条

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[2]

KAZMIERSKI K, 1985, DEFECT RECOGNITION I

[3] RELIABILITY OF INGAASP/INP BURIED HETEROSTRUCTURE 1.3-MU-M LASERS [J].

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HIRAO, M ;

NAKAMURA, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) :1294-1301

[4] VERY LOW THRESHOLD BURIED RIDGE STRUCTURE LASERS EMITTING AT 1.3 MU-M GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

BLONDEAU, R ;

KAZMIERSKI, K ;

KRAKOWSKI, M ;

DUCHEMIN, JP .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :131-133

[5] CW OPERATION OF 1.57-MU-M GAXIN1-XASYP1-YINP DISTRIBUTED FEEDBACK LASERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

BLONDEAU, R ;

KAZMIERSKI, K ;

KRAKOWSKI, M ;

DECREMOUX, B ;

DUCHEMIN, JP ;

BOULEY, JC .

APPLIED PHYSICS LETTERS, 1984, 45 (07) :784-788

[6]

RAZEGHI M, 1986, IEEE J QUANTUM ELECT, V21, P507

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