RELIABILITY OF INGAASP/INP BURIED HETEROSTRUCTURE 1.3-MU-M LASERS

被引：17

作者：

MIZUISHI, K

SAWAI, M

TODOROKI, S

TSUJI, S

HIRAO, M

NAKAMURA, M

机构：

[1] HITACHI LTD,TAKASAKI WORKS,TAKASAKI,GUMMA,JAPAN

[2] HITACHI LTD,PROD ENGN RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 08期

关键词：

D O I：

10.1109/JQE.1983.1072019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1294 / 1301

页数：8

共 15 条

[1] CATHODOLUMINESCENCE EVALUATION OF DARK SPOT DEFECTS IN INP/INGAASP LIGHT-EMITTING-DIODES [J].

CHIN, AK ;

ZIPFEL, CL ;

MAHAJAN, S ;

ERMANIS, F ;

DIGIUSEPPE, MA .

APPLIED PHYSICS LETTERS, 1982, 41 (06) :555-557

[2] DERIVATIVE MEASUREMENTS OF LIGHT-CURRENT-VOLTAGE CHARACTERISTICS OF (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS [J].

DIXON, RW .

BELL SYSTEM TECHNICAL JOURNAL, 1976, 55 (07) :973-980

[3]

Hirao M., 1980, J OPT COMMUN, V1, P10, DOI 10.1515/JOC.1980.1.1.10

[4] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J].

HSIEH, JJ ;

ROSSI, JA ;

DONNELLY, JP .

APPLIED PHYSICS LETTERS, 1976, 28 (12) :709-711

[5] LATTICE DEFECT STRUCTURE OF DEGRADED INGAASP-INP DOUBLE-HETEROSTRUCTURE LASERS [J].

ISHIDA, K ;

KAMEJIMA, T ;

MATSUMOTO, Y ;

ENDO, K .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :16-17

[6] THERMAL RESISTANCE OF HETEROSTRUCTURE LASERS [J].

JOYCE, WB ;

DIXON, RW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :855-862

[7] ACCELERATED AGING CHARACTERISTICS OF INGAASP-INP BURIED HETEROSTRUCTURE LASERS EMITTING AT 1.3 MU-M [J].

MIZUISHI, K ;

HIRAO, M ;

TSUJI, S ;

SATO, H ;

NAKAMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) :L429-L432

[8]

MIZUISHI K, 1979, J APPL PHYS, V1, P6668

[9]

MIZUISHI K, 1981, 3RD INT C INT OPT OP

[10]

MIZUISHI K, 1983, UNPUB J APPL PHYS

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