EQUILIBRIUM TRANSPORT IN AMORPHOUS-SEMICONDUCTORS

被引：64

作者：

SHAPIRO, FR

ADLER, D

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 74卷 / 2-3期

关键词：

D O I：

10.1016/0022-3093(85)90065-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：189 / 194

页数：6

共 13 条

[1] ELECTRONIC CORRELATIONS AND TRANSIENT EFFECTS IN DISORDERED-SYSTEMS [J].

ADLER, D .

SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :53-69

[2]

ADLER D, 1985, PHYSICAL PROPERTIES

[3]

CODY GD, 1984, SEMICONDUCT SEMIMET, V21, P11

[4] HOPPING MODEL FOR ACTIVATED CHARGE TRANSPORT IN AMORPHOUS SILICON [J].

GRUNEWALD, M ;

THOMAS, P .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 94 (01) :125-133

[5] CONDUCTION-BAND DENSITY OF STATES IN HYDROGENATED AMORPHOUS-SILICON DETERMINED BY INVERSE PHOTOEMISSION [J].

JACKSON, WB ;

OH, SJ ;

TSAI, CC ;

ALLEN, JW .

PHYSICAL REVIEW LETTERS, 1984, 53 (15) :1481-1484

[6]

KASTNER MA, 1985, PHYSICAL PROPERTIES, P381

[7] HOPPING IN EXPONENTIAL BAND TAILS [J].

MONROE, D .

PHYSICAL REVIEW LETTERS, 1985, 54 (02) :146-149

[8]

MONROE D, 1985, UNPUB

[9]

Mott N.F., 1979, ELECT PROCESSES NONC, V2nd ed., P33

[10] TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON [J].

SHAPIRO, FR ;

ADLER, D .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) :303-308

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