STUDY OF RADIATIVE RECOMBINATION EFFICIENCY IN 28-180-ANGSTROM-WIDE ALGAAS/GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引：7

作者：

GARBUZOV, DZ ^{[1
]}

EVTIKHIEV, VP ^{[1
]}

KATSAVETS, NI ^{[1
]}

KOMISSAROV, AB ^{[1
]}

KUDRIK, TE ^{[1
]}

KUDRYASHOV, IV ^{[1
]}

KHALFIN, VB ^{[1
]}

BAUER, RK ^{[1
]}

ALFEROV, ZI ^{[1
]}

BIMBERG, D ^{[1
]}

机构：

[1] INST FESTKORPERPHYS,W-1000 BERLIN 12,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 08期

关键词：

D O I：

10.1063/1.357002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The paper reports a theoretical and experimental study of the dependence of the radiative recombination efficiency (eta(i)) on the GaAs quantum well width (L(z)) in AlGaAs/GaAs quantum well structures with binary/binary superlattice confinement. Values of eta(i)>60% at room temperature have been obtained for quantum wells with L(z)>40 angstrom. It is shown that structures with L(z)<40 angstrom exhibit a sharp decrease in eta(i) associated with nonradiative recombination of the high energy part of nonequilibrium carriers in the confining layers even in the presence of comparatively high potential barriers for GAMMA electrons.

引用

页码：4152 / 4155

页数：4

共 17 条

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