ENHANCEMENT OF NONRADIATIVE INTERFACE RECOMBINATION IN GAAS COUPLED QUANTUM WELLS

被引：15

作者：

KRAHL, M ^{[1
]}

BIMBERG, D ^{[1
]}

BAUER, RK ^{[1
]}

MARS, DE ^{[1
]}

MILLER, JN ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 01期

关键词：

D O I：

10.1063/1.345220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The recombination dynamics of GaAs multiple quantum wells as a function of barrier widths LB are studied in a semiconductor in the range between LB=0.87 nm (superlattice) and LB=18.1 nm (uncoupled wells) by means of cathodo- and photoluminescence. With decreasing LB the nonradiative recombination rate is found to be drastically enhanced, where-as the radiative recombination probability decreases. Thus a pronounced decrease of the quantum efficiency results. The controlled variation of the barrier width is found to be decisive for an unambiguous identification of the origin of the traps which are responsible for the nonradiative processes: Comparison with a theoretical calculation shows that they are localized at the heterointerfaces and not in the barriers.

引用

页码：434 / 438

页数：5

共 32 条

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