CHARACTERIZATION OF OXIDE-POLYSILICON-OXIDE ON SILICON BY MONOCHROMATIC ELLIPSOMETRY

被引：2

作者：

BOSCH, S

MONZONIS, F

机构：

[1] Laboratori d'Optica, Depaltament de Fisica Aplicada i Electrònic, Electrbnica, Universitat de Barcelona, 08028 Barcelona

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 12期

关键词：

D O I：

10.1088/0268-1242/10/12/012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method for the characterization of oxide-polysilicon-oxide on silicon by monochromatic ellipsometry is presented. By refining a previous work which enabled an estimation of the thickness of the top oxide from a single (Delta, Psi) measurement, the procedures we propose here allow the simultaneous determination of two unknowns in our samples. The practical process is illustrated by several examples, using a graphical approach which follows from our inversion methods.

引用

页码：1634 / 1637

页数：4

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