EFFECT OF INVERSION ON BARRIER HEIGHT IN A METAL-SIO2-SI TUNNEL SYSTEM

被引：10

作者：

DAW, AN

CHATTOPADHYAY, P

机构：

[1] Inst of Radio Physics &, Electronics, Calcutta, India, Inst of Radio Physics & Electronics, Calcutta, India

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 12期

关键词：

SEMICONDUCTING SILICON - Electronic Properties - SEMICONDUCTOR DEVICES - Tunneling;

D O I：

10.1016/0038-1101(84)90044-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of strong inversion in a metal-SiO//2-p-Si system has been studied. It is seen that the plot of barrier height versus metal work function of the system becomes nonlinear when the metal work function is lowered below a critical value. These values of critical work function are calculated and analyzed for different values of doping and oxide charge.

引用

页码：1057 / 1060

页数：4

共 6 条

[1] IV CHARACTERISTICS FOR SILICON SCHOTTKY SOLAR CELLS [J].