A COMPARISON OF SINGLE-CARRIER AND DOUBLE-CARRIER INJECTION IN AMORPHOUS-SILICON ALLOYS

被引：25

作者：

HACK, M

DENBOER, W

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 04期

关键词：

D O I：

10.1063/1.336067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1554 / 1561

页数：8

共 14 条

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[3] DOMINANT RECOMBINATION PROCESS IN AMORPHOUS-SILICON ALLOYS [J].

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HACK, M .

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[4] PHYSICS OF AMORPHOUS-SILICON ALLOY P-I-N SOLAR-CELLS [J].

HACK, M ;

SHUR, M .

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[5] PHOTOCONDUCTIVITY AND RECOMBINATION IN AMORPHOUS-SILICON ALLOYS [J].

HACK, M ;

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SHUR, M .

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[6] THEORETICAL MODELING OF AMORPHOUS SILICON-BASED ALLOY P-I-N SOLAR-CELLS [J].

HACK, M ;

SHUR, M .

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[7]

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[8]

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[9]

Lampert M.A., 1970, CURRENT INJECTION SO

[10] THE DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED BY SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J].

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