A PROCEDURE TO PREPARE CROSS-SECTIONAL SAMPLES FOR TEM

被引:6
作者
RIVAUD, L
机构
来源
JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE | 1985年 / 2卷 / 06期
关键词
D O I
10.1002/jemt.1060020608
中图分类号
Q [生物科学];
学科分类号
07 ; 0710 ; 09 ;
摘要
引用
收藏
页码:577 / 580
页数:4
相关论文
共 12 条
[1]   CROSS-SECTIONAL SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY [J].
ABRAHAMS, MS ;
BUIOCCHI, CJ .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) :3315-3316
[2]   THE PREPARATION OF CROSS-SECTION SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY [J].
BRAVMAN, JC ;
SINCLAIR, R .
JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1984, 1 (01) :53-61
[3]  
CHU SNG, 1984, J ELECTROCHEM SOC, V131, P2663, DOI 10.1149/1.2115378
[4]  
FOLL F, 1981, J APPL PHYS, V52, P250, DOI 10.1063/1.328440
[5]   A CHEMICAL THINNING TECHNIQUE FOR TRANSMISSION ELECTRON-MICROSCOPY CROSS-SECTIONAL SAMPLES [J].
GABORIAUD, RJ .
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (05) :837-844
[6]  
KING WE, 1984, JUN P INT C MET CORR
[7]   FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS [J].
KOOI, E ;
VANLIEROP, JG ;
APPELS, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) :1117-1120
[8]  
LIDBURY DPG, 1971, ELECTRON ENG, V40, P50
[9]   A MODIFICATION TO THE VCR DIMPLER SPECIMEN PLATEN FOR TEM SAMPLE PREPARATION [J].
RIVAUD, L .
JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1985, 2 (03) :265-266
[10]  
SHENG TT, 1976, IEEE T ELECTRON DEV, V23, P531, DOI 10.1109/T-ED.1976.18447