GATE DELAYS OF INGAAS INP HETEROJUNCTION INTEGRATED INJECTION LOGIC

被引：7

作者：

TABATABAIEALAVI, K ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 08期

关键词：

D O I：

10.1109/EDL.1982.25550

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：200 / 202

页数：3

共 16 条

[1] INVESTIGATION OF THE INTRINSIC DELAY (SPEED LIMIT) IN MTL-I2L [J].

BERGER, HH ;

HELWIG, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :405-415

[2] HIGH-SENSITIVITY INP-INGAAS HETEROJUNCTION PHOTO-TRANSISTOR [J].

CAMPBELL, JC ;

DENTAI, AG ;

BURRUS, CA ;

FERGUSON, JF .

ELECTRONICS LETTERS, 1980, 16 (18) :713-714

[3]

DEVLIN WJ, 1978, I PHYS C SER, V45, P510

[4]

EDEN RC, 1982, P IEEE, V70, P1

[5] SCALING I2L FOR VLSI [J].

EVANS, SA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :396-405

[6] DEVICE PHYSICS OF INTEGRATED INJECTION LOGIC [J].

KLAASSEN, FM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (03) :145-152

[7] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[8] GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR INTEGRATED-CIRCUIT APPLICATIONS [J].

MCLEVIGE, WV ;

YUAN, HT ;

DUNCAN, WM ;

FRENSLEY, WR ;

DOERBECK, FH ;

MORKOC, H ;

DRUMMOND, TJ .

ELECTRON DEVICE LETTERS, 1982, 3 (02) :43-45

[9]

NUZILLAT G, 1980, P I ELEC ENG, V127, P287

[10] GA0.47IN0.53AS - A TERNARY SEMICONDUCTOR FOR PHOTODETECTOR APPLICATIONS [J].

PEARSALL, TP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (07) :709-720

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