EFFECT OF COMPENSATION ON ESR SPECTRUM IN HEAVILY DOPED N-SILICON

被引：2

作者：

IGO, T

机构：

来源：

关键词：

D O I：

10.1143/JPSJ.21.1013

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1013 / &

共 6 条

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[4] DEPENDENCE OF ESR LINE WIDTH ON DONOR CONCENTRATION IN SILICON [J].

SUGIURA, Y .

[5]

ZHURKIN BG, 1964, SOV PHYS-SOL STATE, V6, P879

[6]

ZHURKIN BG, 1965, FIZ TVERD TELA+, V6, P2040