NEW ANALYSIS OF SEMICONDUCTOR ISOLATORS - THE MODIFIED SPECTRAL DOMAIN ANALYSIS

被引：6

作者：

TEDJINI, S ^{[1
]}

PIC, E ^{[1
]}

机构：

[1] LAB GENIE PHYS,F-38402 ST MARTIN DHERES,FRANCE

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1985年 / 33卷 / 01期

关键词：

MATHEMATICAL TECHNIQUES - SEMICONDUCTOR DEVICES - Millimeter Waves - SPECTRUM ANALYSIS;

D O I：

10.1109/TMTT.1985.1132947

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper addresses semiconductor isolators of the field displacement effect type. The semiconductor is modelized by its surface impedance tensor. This description allows an extension of the well-known spectral domain method to the analysis of the semiconductor isolators. Different configurations are studied and numerical results are given. The finline isolator with InSb is shown to be the best choice - indeed, insertion loss is less than 3 db/cm and isolation is greater than 18 db/cm. Experimental results supporting these calculations will be published in a following paper.

引用

页码：59 / 64

页数：6

共 13 条

[1]

AMALRIC JL, 1978, THESIS INP TOULOUSE

[2] NONRECIPROCAL WAVE PROPAGATION IN SEMICONDUCTOR LOADED WAVEGUIDES IN PRESENCE OF A TRANSVERSE MAGNETIC FIELD [J].