DEVICE QUALITY AIGAAS/GAAS HETEROSTRUCTURES GROWN IN A MULTICHAMBER ORGANOMETALLIC VAPOR-PHASE EPITAXIAL APPARATUS

被引：13

作者：

SHEALY, JR ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

关键词：

D O I：

10.1063/1.96660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：925 / 927

页数：3

共 9 条

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[6]

SHEALY JR, 1982, I PHYSICS C SERIES, V65, P109

[7]

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[8]

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[9]

Tsu R., 1981, SOC PHOTOOPT INSTRUM, V276, P78