EFFECT OF BARRIER THICKNESS ON THE LUMINESCENCE PROPERTIES OF ALAS/GAAS MULTIPLE QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引：12

作者：

DEMIGUEL, JL

FUJIWARA, K

TAPFER, L

PLOOG, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 08期

关键词：

D O I：

10.1063/1.96001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：836 / 838

页数：3

共 11 条

[1]

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[6] IMPROVED HETEROINTERFACE AND VERTICAL TRANSPORT IN GAAS SINGLE QUANTUM WELL CONFINED BY ALL-BINARY GAAS/ALAS SHORT-PERIOD-SUPERLATTICES [J].

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[7] PHOTOLUMINESCENCE OF ALXGA1-XAS/GAAS QUANTUM WELL HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY .2. INTRINSIC FREE-EXCITON NATURE OF QUANTUM WELL LUMINESCENCE [J].

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[10]

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