DIRECT OBSERVATION OF BAND MIXING IN GAAS-(ALXGA1-X)AS QUANTUM HETEROSTRUCTURES

被引：9

作者：

SOORYAKUMAR, R

CHEMLA, DS

PINCZUK, A

GROSSARD, A

WEIGMANN, W

SHAM, LJ

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] UNIV CALIF SAN DIEGO,DEPT PHYS,LA JOLLA,CA 92093

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582822

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：349 / 350

页数：2

共 8 条

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[2] MODIFICATION OF OPTICAL-PROPERTIES OF GAAS-GA1-XALXAS SUPER-LATTICES DUE TO BAND MIXING [J].

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[3] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

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[4] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].

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WIEGMANN, W ;

HENRY, CH .

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[5] OPTICAL PROCESSES OF 2D ELECTRON-PLASMA IN GAAS-(ALGA) AS HETEROSTRUCTURES [J].

PINCZUK, A ;

SHAH, J ;

MILLER, RC ;

GOSSARD, AC ;

WIEGMANN, W .

SOLID STATE COMMUNICATIONS, 1984, 50 (08) :735-739

[6]

Stormer H. L., 1980, Journal of the Physical Society of Japan, V49, P1013

[7] INTRINSIC RADIATIVE RECOMBINATION FROM QUANTUM STATES IN GAAS-A-LAMBDA-XGA1-XAS MULTI-QUANTUM WELL STRUCTURES [J].

WEISBUCH, C ;

MILLER, RC ;

DINGLE, R ;

GOSSARD, AC ;

WIEGMANN, W .

SOLID STATE COMMUNICATIONS, 1981, 37 (03) :219-222

[8] ELECTRONIC-PROPERTIES OF FLAT-BAND SEMICONDUCTOR HETEROSTRUCTURES [J].

WHITE, SR ;

SHAM, LJ .

PHYSICAL REVIEW LETTERS, 1981, 47 (12) :879-882

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