SIMULATION OF RETARDED DIFFUSION OF ANTIMONY AND ENHANCED DIFFUSION OF PHOSPHORUS IN SILICON

被引：3

作者：

BRABEC, T

GUERRERO, E

BUDIL, M

POETZL, HW

机构：

来源：

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1987年 / 67卷 / 04期

关键词：

D O I：

10.1007/BF01304107

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：415 / 420

页数：6

共 18 条

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[7]

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[8] INTERSTITIAL AND VACANCY CONCENTRATIONS IN THE PRESENCE OF INTERSTITIAL INJECTION [J].

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[10] THE GROWTH OF OXIDATION STACKING-FAULTS AND THE POINT-DEFECT GENERATION AT SI-SIO INTERFACE DURING THERMAL-OXIDATION OF SILICON [J].

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