ATOMIC-RESOLUTION SCANNING-TUNNELING-MICROSCOPY WITH A GALLIUM-ARSENIDE TIP

被引:27
作者
NUNES, G [1 ]
AMER, NM [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.110654
中图分类号
O59 [应用物理学];
学科分类号
摘要
A scanning tunneling microscope which uses a gallium arsenide tip has been successfully constructed. Atomic resolution is demonstrated by the imaging of the Si(111)-7 X 7 surface in ultrahigh vacuum. Details of the tip preparation are given and the tip tunneling current characteristics are discussed.
引用
收藏
页码:1851 / 1853
页数:3
相关论文
共 16 条
[1]  
BINNIG G, 1986, IBM J RES DEV, V30, P355
[2]   TUNNELING THROUGH A CONTROLLABLE VACUUM GAP [J].
BINNIG, G ;
ROHRER, H ;
GERBER, C ;
WEIBEL, E .
APPLIED PHYSICS LETTERS, 1982, 40 (02) :178-180
[3]  
FEENSTRA RM, 1983, SCANNING TUNNELING M, P251
[4]  
FOXTON CT, 1973, J PHYS CHEM SOLIDS, V34, P1693
[5]   CHARACTERIZATION OF ETCH RATE AND ANISOTROPY IN THE TEMPERATURE-CONTROLLED CHEMICALLY ASSISTED ION-BEAM ETCHING OF GAAS [J].
GRANDE, WJ ;
JOHNSON, JE ;
TANG, CL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (05) :1075-1079
[6]   ULTRAFAST TIME RESOLUTION IN SCANNED PROBE MICROSCOPIES [J].
HAMERS, RJ ;
CAHILL, DG .
APPLIED PHYSICS LETTERS, 1990, 57 (19) :2031-2033
[8]   GAAS SPIN POLARIZED ELECTRON SOURCE [J].
PIERCE, DT ;
CELOTTA, RJ ;
WANG, GC ;
UNERTL, WN ;
GALEJS, A ;
KUYATT, CE ;
MIELCZAREK, SR .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1980, 51 (04) :478-499
[9]   SPIN-POLARIZED ELECTRON-MICROSCOPY [J].
PIERCE, DT .
PHYSICA SCRIPTA, 1988, 38 (02) :291-296
[10]   AUGER CHARACTERIZATION OF CHEMICALLY ETCHED GAAS SURFACES [J].
SHIOTA, I ;
MOTOYA, K ;
OHMI, T ;
MIYAMOTO, N ;
NISHIZAWA, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (01) :155-157