AUGER CHARACTERIZATION OF CHEMICALLY ETCHED GAAS SURFACES

被引：59

作者：

SHIOTA, I ^{[1
]}

MOTOYA, K ^{[1
]}

OHMI, T ^{[1
]}

MIYAMOTO, N ^{[1
]}

NISHIZAWA, J ^{[1
]}

机构：

[1] TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 01期

关键词：

D O I：

10.1149/1.2133232

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：155 / 157

页数：3

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[6] NONSTOICHIOMETRY OF TE-DOPED GAAS [J].

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ISHIDA, K .

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[7]

OHMI T, 1976, IEE COMMUN JPN ED, V75

[8]

OKABE T, 1968, INT ELECTRON DEVICE

[9]

SHIOTA I, TO BE PUBLISHED

[10]

SHIOTA I, 1975, 2ND RES M SURF EL MI

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