CF4/SILICON SURFACE-REACTIONS - EVIDENCE FOR PARALLEL ETCHING MECHANISMS FROM MODULATED ION-BEAM STUDIES

被引：19

作者：

MCNEVIN, SC

BECKER, GE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 01期

关键词：

D O I：

10.1116/1.582910

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：27 / 33

页数：7

共 15 条

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