ROOM-TEMPERATURE 1.55-MU-M OPTICAL BISTABILITY IN A GAINAS ALINAS MULTIPLE-QUANTUM-WELL ETALON

被引：10

作者：

KAWAGUCHI, H

KAWAMURA, Y

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 19期

关键词：

OPTICAL MATERIALS - Stability;

D O I：

10.1049/el:19870710

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

1. 55 mu m optical bistability has been observed in a GaInAs/AlInAs MQW etalon at room temperature. We have shown that the nonlinear mechanism responsible for the bistability is due to an electronic nonlinearity in the refractive index.

引用

页码：1013 / 1014

页数：2

共 6 条

[1]

GIBBS HM, 1984, OPTICAL BISTABILITY

[2] ABSORPTIVE AND DISPERSIVE BISTABILITY IN SEMICONDUCTOR INJECTION-LASERS [J].

KAWAGUCHI, H .

OPTICAL AND QUANTUM ELECTRONICS, 1987, 19 :S1-S36

[3] OBSERVATION OF HEAVY-HOLE AND LIGHT-HOLE EXCITONS IN INGAAS/INALAS MQW STRUCTURES AT ROOM-TEMPERATURE [J].

KAWAMURA, Y ;

WAKITA, K ;

ASAHI, H .

ELECTRONICS LETTERS, 1985, 21 (09) :371-373

[4] DIRECT MEASUREMENT OF DISPERSIVE NONLINEARITIES IN GAAS [J].

LEE, YH ;

CHAVEZPIRSON, A ;

RHEE, BK ;

GIBBS, HM ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1986, 49 (22) :1505-1507

[5] NONLINEAR INTEGRATED-OPTICS [J].

STEGEMAN, GI ;

SEATON, CT .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) :R57-R78

[6] 1.55-MU-M OPTICAL LOGIC ETALON WITH PICOJOULE SWITCHING ENERGY MADE OF INGAAS/INP MULTIPLE QUANTUM-WELLS [J].

TAI, K ;

JEWELL, JL ;

TSANG, WT ;

TEMKIN, H ;

PANISH, M ;

TWU, Y .

APPLIED PHYSICS LETTERS, 1987, 50 (13) :795-797

← 1 →