TUNNELING IMAGES OF THE 5X5 SURFACE RECONSTRUCTION ON GE-SI(111)

[11] OBSERVATION OF ORDER-DISORDER TRANSITIONS IN STRAINED-SEMICONDUCTOR SYSTEMS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (07) : 765 - 768

[12] X-RAY-STANDING-WAVE INTERFACE STUDIES OF GERMANIUM ON SI(111) [J]. PHYSICAL REVIEW B, 1985, 31 (10): : 6884 - 6886

[13] Pauling L., 1960, NATURE CHEM BOND

[14] SURFACE DISLOCATION PROCESS FOR SURFACE RECONSTRUCTION AND ITS APPLICATION TO THE SILICON (111) 7X7 RECONSTRUCTION [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (03) : 199 - 202

[15] STRUCTURE AND ADSORPTION CHARACTERISTICS OF CLEAN SURFACES OF GERMANIUM AND SILICON [J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (04) : 917 - 926

[16] TAKAYANAGI K, UNPUB J VAC SCI TE A

[17] TRUMP RM, 1982, SOLID STATE COMMUN, V44, P971

[11] OBSERVATION OF ORDER-DISORDER TRANSITIONS IN STRAINED-SEMICONDUCTOR SYSTEMS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (07) : 765 - 768

[12] X-RAY-STANDING-WAVE INTERFACE STUDIES OF GERMANIUM ON SI(111) [J]. PHYSICAL REVIEW B, 1985, 31 (10): : 6884 - 6886

[13] Pauling L., 1960, NATURE CHEM BOND

[14] SURFACE DISLOCATION PROCESS FOR SURFACE RECONSTRUCTION AND ITS APPLICATION TO THE SILICON (111) 7X7 RECONSTRUCTION [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (03) : 199 - 202

[15] STRUCTURE AND ADSORPTION CHARACTERISTICS OF CLEAN SURFACES OF GERMANIUM AND SILICON [J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (04) : 917 - 926

[16] TAKAYANAGI K, UNPUB J VAC SCI TE A

[17] TRUMP RM, 1982, SOLID STATE COMMUN, V44, P971