IR DETECTION BY DEPLETION OF TRAPPED CHARGE IN LOCALIZED IMPURITY STATES OF AN EXTRINSIC SEMICONDUCTOR

被引：4

作者：

COON, DD

GUNAPALA, SD

KARUNASIRI, RPG

MUEHLHOFF, HM

机构：

来源：

INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES | 1984年 / 5卷 / 02期

关键词：

D O I：

10.1007/BF01417650

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：197 / 205

页数：9

相关论文

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