OPTIMIZATION OF THE POLYCRYSTALLINE SILICON-ON-SILICON DIOXIDE CHARACTERIZATION USING SPECTROSCOPIC ELLIPSOMETRY

被引：15

作者：

ASINOVSKY, LM

机构：

[1] Rudolph Research, Flanders

来源：

THIN SOLID FILMS | 1993年 / 233卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90092-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spectroscopic ellipsometry has been used to characterize polycrystalline silicon (poly-Si), prepared with the bulk low pressure chemical vapor deposition technology. The measurements were taken at angles of incidence of 65 and 70-degrees in the wavelength range from 260 to 860 nm. The analysis of the data identified the presence of the inhomogeneity in the poly-Si layer. A method is presented that provides a step-by-step procedure for interpretation of the spectroscopic ellipsometry measurements.

引用

页码：210 / 213

页数：4

共 8 条

[1] DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV [J].