NONDESTRUCTIVE DEPTH PROFILING BY SPECTROSCOPIC ELLIPSOMETRY

被引：114

作者：

VEDAM, K

MCMARR, PJ

NARAYAN, J

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27650

[2] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 04期

关键词：

D O I：

10.1063/1.96156

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：339 / 341

页数：3

相关论文

共 15 条

[1] OPTIMIZING PRECISION OF ROTATING-ANALYZER ELLIPSOMETERS
ASPNES, DE
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1974, 64 (05) : 639 - 646
[2] CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS
ASPNES, DE
STUDNA, AA
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (04) : 316 - 318
[3] HIGH PRECISION SCANNING ELLIPSOMETER
ASPNES, DE
STUDNA, AA
[J]. APPLIED OPTICS, 1975, 14 (01): : 220 - 228
[4] INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY
ASPNES, DE
THEETEN, JB
[J]. PHYSICAL REVIEW B, 1979, 20 (08): : 3292 - 3302
[5] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV
ASPNES, DE
STUDNA, AA
[J]. PHYSICAL REVIEW B, 1983, 27 (02) : 985 - 1009
[6] OPTICAL-PROPERTIES OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE
ASPNES, DE
THEETEN, JB
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (14) : 1046 - 1050
[7] ASPNES DE, 1979, J VAC SCI TECHNOL, V16, P1983
[8] ASPNES DE, 1980, J ELECTROCHEM SOC, V127, P378
[9] ASPNES DE, 1985, NBS SPECIAL PUB, V697, P5
[10] ASPNES DE, 1983, SPIE, V452, P60