HALL FACTOR FOR IONIZED IMPURITY SCATTERING

被引：12

作者：

GELMONT, B ^{[1
]}

SHUR, MS ^{[1
]}

机构：

[1] UNIV VIRGINIA,DEPT ELECT ENGN,CHARLOTTESVILLE,VA 22903

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 04期

关键词：

D O I：

10.1063/1.360085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose an interpolation formula which describes the dependence of the Hall factor for impurity scattering in semiconductors on the carrier concentration and temperature with sufficient accuracy for practical calculations. This formula applies to semiconductors with an arbitrary degree of degeneracy which makes it especially useful for the interpretation of the measured temperature dependencies of a Hall mobility. (C) 1995 American Institute of Physics.

引用

页码：2846 / 2847

页数：2