HIGH-POWER 980 NM RIDGE WAVE-GUIDE LASERS WITH ETCH-STOP LAYER

被引：20

作者：

ELMAN, B

SHARFIN, WF

CRAWFORD, FD

RIDEOUT, WC

LACOURSE, J

LAUER, RB

机构：

[1] GTE Laboratories Incorporated, Waltham, Massachusetts 02254

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 22期

关键词：

SEMICONDUCTOR LASERS; WAVE-GUIDES; LASERS;

D O I：

10.1049/el:19911258

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, the use of an etch-stop layer to precisely control the mesa height in ridge waveguide InGaAs/GaAs lasers is reported. These 980 nm devices emit up to 180 mW of total power in the fundamental spatial mode and lase in a single frequency with sidemode suppression ratios of greater than 25 dB.

引用

页码：2032 / 2033

页数：2

共 6 条

[1]

CRAWFORD FD, 1991, 2ND OPT AMPL THEIR A, P34

[2] STABLE OPERATION (OVER 5000-H) OF HIGH-POWER 0.98-MUM INGAAS GAAS STRAINED QUANTUM-WELL RIDGE WAVE-GUIDE LASERS FOR PUMPING ER3+-DOPED FIBER AMPLIFIERS [J].