POLYIMIDE ETCHING AND PASSIVATION DOWNSTREAM OF AN O2-CF4-AR MICROWAVE PLASMA

被引：12

作者：

VUKANOVIC, V

TAKACS, GA

MATUSZAK, EA

EGITTO, FD

EMMI, F

HORWATH, RS

机构：

[1] IBM CORP,DIV SYST TECHNOL,ENDICOTT,NY 13760

[2] ROCHESTER INST TECHNOL,CTR MAT SCI & ENGN,ROCHESTER,NY 14623

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573836

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：698 / 699

页数：2

共 6 条

[1] DESIGN CRITERIA FOR UNIFORM REACTION-RATES IN AN OXYGEN PLASMA [J].

BATTEY, JF .

[2]

DEDINAS J, 1983, 1ST P ANN INT C PLAS, P119

[3]

DEDINAS J, 1984, UNPUB 2ND P INT C PL

[4] PLASMA-ETCHING OF ORGANIC MATERIALS .1. POLYIMIDE IN O2-CF4 [J].

EGITTO, FD ;

EMMI, F ;

HORWATH, RS ;

VUKANOVIC, V .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03) :893-904

HANNON, JJ ;

COOK, JM .

[6]

ROBINSON B, 1985, 5TH P S PLASM PROC, P206