LATERAL THERMAL-DIFFUSIVITY OF EPITAXIAL DIAMOND FILMS

被引：35

作者：

KADING, OW ^{[1
]}

ROSLER, M ^{[1
]}

ZACHAI, R ^{[1
]}

FUSSER, HJ ^{[1
]}

MATTHIAS, E ^{[1
]}

机构：

[1] FREE UNIV BERLIN,D-14195 BERLIN,GERMANY

来源：

关键词：

D O I：

10.1016/0925-9635(94)90165-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly oriented heteroepitaxial diamond films grown on silicon (001) substrates were investigated by photothermal displacement spectroscopy at transient thermal gratings. Lateral thermal diffusivities were measured as a function of the height within the 90 mum thick films. A strong diffusivity variation was observed from less than 1 cm2 s-1 near the substrate interface up to 10 cm2 s-1 in the top growth region, which is about 80% of that for single-crystal type IIa diamond. The results are compared with those obtained from fibre-textured diamond films. The structural properties are characterized using micro-Raman spectroscopy.

引用

页码：1178 / 1182

页数：5

共 3 条

[1] UNUSUALLY HIGH THERMAL-CONDUCTIVITY IN DIAMOND FILMS [J].

GRAEBNER, JE ;

JIN, S ;

KAMMLOTT, GW ;

HERB, JA ;

GARDINIER, CF .

APPLIED PHYSICS LETTERS, 1992, 60 (13) :1576-1578

[2] EPITAXIAL DIAMOND THIN-FILMS ON (001) SILICON SUBSTRATES [J].

JIANG, X ;

KLAGES, CP ;

ZACHAI, R ;

HARTWEG, M ;

FUSSER, HJ .

APPLIED PHYSICS LETTERS, 1993, 62 (26) :3438-3440

[3] THERMAL DIFFUSIVITIES OF THIN DIAMOND FILMS ON SILICON [J].

KADING, OW ;

MATTHIAS, E ;

ZACHAI, R ;

FUSSER, HJ ;

MUNZINGER, P .

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