CROSS-SECTIONAL LATERAL-FORCE MICROSCOPY OF SEMICONDUCTOR HETEROSTRUCTURES AND MULTIPLE-QUANTUM WELLS

被引：12

作者：

BRATINA, G ^{[1
]}

VANZETTI, L ^{[1
]}

FRANCIOSI, A ^{[1
]}

机构：

[1] IST NAZL FIS MAT, TECNOL AVANZATE SUPERFICI & CATALISI LAB, I-34012 TRIESTE, ITALY

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.52.R8625

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Lateral-force microscopy and atomic-force microscopy were employed to investigate (110) cross sections of ZnSe-GaAs(001) and In1-xGaxP/GaAs(001) heterostructures, as well as Zn1-xCdxSe/ZnSe multiple-quantum-well structures grown by molecular-beam epitaxy. Differences in the dynamic friction coefficient were successfully exploited to image interfaces in air with a lateral resolution better than 3-5 nm for all heterostructures.

引用

页码：R8625 / R8628

页数：4

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