THE EFFECTS OF BAND BENDING ON THE PHOTOCONDUCTIVITY IN A-SI-H

被引:23
作者
JACKSON, WB
THOMPSON, MJ
机构
来源
PHYSICA B & C | 1983年 / 117卷 / MAR期
关键词
D O I
10.1016/0378-4363(83)90683-6
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:883 / 885
页数:3
相关论文
共 7 条
  • [1] DETERMINATION OF THE DENSITY OF GAP STATES - FIELD-EFFECT AND SURFACE-ADSORPTION
    FRITZSCHE, H
    [J]. SOLAR CELLS, 1980, 2 (03): : 289 - 300
  • [2] PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND DETECTION
    JACKSON, WB
    AMER, NM
    BOCCARA, AC
    FOURNIER, D
    [J]. APPLIED OPTICS, 1981, 20 (08): : 1333 - 1344
  • [3] JACKSON WG, UNPUB
  • [4] DERIVATION OF THE LOW-ENERGY OPTICAL-ABSORPTION SPECTRA OF A-SI-H FROM PHOTOCONDUCTIVITY
    MODDEL, G
    ANDERSON, DA
    PAUL, W
    [J]. PHYSICAL REVIEW B, 1980, 22 (04): : 1918 - 1925
  • [5] OPTICAL-ABSORPTION BY GAP STATES IN HYDROGENATED AMORPHOUS-SILICON
    PANKOVE, JI
    POLLAK, FH
    SCHNABOLK, C
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 459 - 462
  • [6] TUAN HC, UNPUB IEEE ELECTRON
  • [7] PHOTOCONDUCTIVITY, TRAPPING, AND RECOMBINATION IN DISCHARGE-PRODUCED, HYDROGENATED AMORPHOUS-SILICON
    WRONSKI, CR
    DANIEL, RE
    [J]. PHYSICAL REVIEW B, 1981, 23 (02): : 794 - 804