THIN-FILM TRANSISTORS ON A-SI-H

被引：23

作者：

THOMPSON, MJ

JOHNSON, NM

MOYER, MD

LUJAN, R

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1982.20932

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1643 / 1646

页数：4

共 8 条

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[2] JOHNSON NM, 1980, PHYSICS MOS INSULATO, P311
[3] APPLICATION OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS IN ADDRESSABLE LIQUID-CRYSTAL DISPLAY PANELS
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LECOMBER, PG
HUGHES, AJ
[J]. APPLIED PHYSICS, 1981, 24 (04): : 357 - 362
[4] DEFECT STATES IN DOPED AND COMPENSATED A-SI-H
STREET, RA
BIEGELSEN, DK
KNIGHTS, JC
[J]. PHYSICAL REVIEW B, 1981, 24 (02): : 969 - 984
[5] STREET RA, 1978, PHYS REV B, V18, P1800
[6] SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH10
[7] SILICIDE FORMATION IN PD-A-SI-H SCHOTTKY BARRIERS
THOMPSON, MJ
JOHNSON, NM
NEMANICH, RJ
TSAI, CC
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 274 - 276
[8] THOMPSON MJ, 1979, 2ND P EC PHOT SOL EN, P303