NUCLEATION AND FILM GROWTH IN PHOTOCHEMICAL VAPOR-DEPOSITION OF ALUMINUM THIN-FILM USING DIMETHYLALUMINUM HYDRIDE

被引:10
作者
KAWAI, T
HANABUSA, M
机构
[1] Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Tenpaku, Toyohashi
[2] Nippondenso, 441-01, Kouda, Nukata-gun, Aichi
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 10期
关键词
PHOTOCHEMICAL VAPOR DEPOSITION; ALUMINUM THIN FILM; ADSORPTION; PHOTODISSOCIATION; PHOTOINITIATION; NUCLEATION; DIMETHYLALUMINUM HYDRIDE;
D O I
10.1143/JJAP.32.4690
中图分类号
O59 [应用物理学];
学科分类号
摘要
In the deposition of aluminum thin films on silicon oxide via a photochemical surface reaction of dimethylaluminum hydride (DMAH) induced by a deuterium lamp, the initial nucleation period was independent of gas pressure and became shorter with increasing UV intensity,whereas the rate of subsequent film growth on underlying aluminum layers increased with gas pressure, but it became independent of UV intensity and growth continued even without irradiation. We concluded that on the substrate surface photodissociation of adsorbates took place more slowly than adsorption of DMAH, while on growing aluminum layers the thermal decomposition of source molecules was dominant.
引用
收藏
页码:4690 / 4693
页数:4
相关论文
共 13 条
[11]  
SHINZAWA T, 1990, MATER RES SOC S P VL, V5, P377
[12]   SELECTIVE ALUMINUM CHEMICAL VAPOR-DEPOSITION [J].
TSUBOUCHI, K ;
MASU, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :856-862
[13]   DIRECT PROJECTION PATTERNING OF ALUMINUM ON THE SIO2 SURFACE BY USING SYNCHROTRON RADIATION-INDUCED GROWTH INITIATION OF THERMAL CHEMICAL VAPOR-DEPOSITION [J].
UESUGI, F ;
NISHIYAMA, I .
APPLIED SURFACE SCIENCE, 1992, 62 (03) :151-156