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MONOLITHICALLY INTEGRATED PHOTONIC SWITCHING DEVICE USING AN MSM PD, MESFETS, AND A VCSEL

被引：32
作者：
MATSUO, SJ
NAKAHARA, T
KOHAMA, Y
OHISO, Y
FUKUSHIMA, S
KUROKAWA, T
机构：
[1] NTT optoelectronics Laboratories, Atsugi, Kanagawa
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 10期
关键词：
D O I：
10.1109/68.466578
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have fabricated a photonic switching device that monolithically integrates a metal-semiconductor-metal photodetector, metal-semiconductor field-effect transistors, and a vertical-cavity surface-emitting laser, This device can perform both NOR- and OR-types of operation with thresholding input-output characteristics. The contrast ratio is more than 30 dB with optical gain, The device also shows a 3-dB bandwidth of 220 MHz and switching energy of 700 fJ at a 100-MHz frequency.
引用
收藏
页码：1165 / 1167
页数：3
相关论文
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