MONOLITHIC INTEGRATION OF A VERTICAL CAVITY SURFACE EMITTING LASER AND A METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

被引：20

作者：

YANG, YJ ^{[1
]}

DZIURA, TG ^{[1
]}

BARDIN, T ^{[1
]}

WANG, SC ^{[1
]}

FERNANDEZ, R ^{[1
]}

LIAO, ASH ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,DIV OPT COMMUN,SAN JOSE,CA 95131

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.108868

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Monolithic integration of a vertical cavity surface emitting laser (VCSEL) and a metal semiconductor field effect transistor (MESFET) is reported for the first time. The epitaxial layers for both GaAs VCSELs and MESFETs are grown on an n-type GaAs substrate by molecular-beam epitaxy (MBE) at the same time. The VCSELs with a 1 0 mum diam active region exhibit an average threshold current (I(th)) of 6 mA and a continuous wave (cw) maximum power of 1.1 mW. The MESFETs with a 3 mum gate length have a transconductance of 50 mS/mm. The laser output is modulated by the gate voltage of the MESFETs and exhibits an optical/electrical conversion factor of 0.5 mW/V.

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收藏

页码：600 / 602

页数：3

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