THEORETICAL-STUDY OF THE INFORMATION DEPTH OF THE CATHODOLUMINESCENCE SIGNAL IN SEMICONDUCTOR-MATERIALS

被引：24

作者：

HERGERT, W ^{[1
]}

PASEMANN, L ^{[1
]}

机构：

[1] KARL MARX UNIV,SEKT PHYS,DDR-7010 LEIPZIG,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 85卷 / 02期

关键词：

CATHODOLUMINESCENCE;

D O I：

10.1002/pssa.2210850240

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For an homogeneous semi-infinite semiconductor samples the thickness of that surface layer from which 95% of the cathodoluminescence intensity originates is calculated. This layer thickness is considered the information depth of the cathodoluminescence signal and dependence on electron beam energy, diffusion length, and absorption coefficient was investigated.

引用

页码：641 / 648

页数：8

共 9 条

[1]

BERGH AA, 1976, LIGHT EMITTING DIODE, P156

[2]

BRESSE JF, 1972, 5TH P ANN SEM S, P105

[3] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J].